发明授权
- 专利标题： Vertical diode and fabrication method thereof
- 专利标题（中）： 垂直二极管及其制造方法
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申请号： US15278097申请日： 2016-09-28
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公开(公告)号： US09548375B1公开(公告)日： 2017-01-17
- 发明人: Hsiung-Shih Chang , Manoj Kumar , Jui-Chun Chang , Chia-Hao Lee , Li-Che Chen
- 申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： TW Hsinchu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/36 ; H01L21/762 ; H01L29/861 ; H01L29/06
摘要：
A vertical diode is provided. The vertical diode includes a high-voltage N-type well region in a substrate, and two P-doped regions spaced apart from each other in the high-voltage N-type well region. The vertical diode also includes an N-type well region in the high-voltage N-type well region, and an N-type heavily doped region in the N-type well region. A plurality of isolation structures are formed on the substrate to define an anode region and a cathode region. There is a bottom N-type implanted region under the high-voltage N-type well region corresponding to the anode region. The bottom N-type implanted region directly contacts or partially overlaps the high-voltage N-type well region. A method for fabricating a vertical diode is also provided.
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