Invention Grant
- Patent Title: Conductive spline for metal gates
- Patent Title (中): 导电花键用于金属门
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Application No.: US14282600Application Date: 2014-05-20
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Publication No.: US09548384B2Publication Date: 2017-01-17
- Inventor: Mahalingam Nandakumar , Steve Lytle
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap Daniel Chan; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/66 ; H01L21/768 ; H01L23/485 ; H01L23/528 ; H01L29/49
Abstract:
An integrated circuit may include a metal gate which extends over an active area and onto an isolation dielectric layer. A conductive spline is formed on the metal gate, extending on the metal gate over at least a portion of the isolation dielectric layer, and extending on the metal gate for a length at least four times a width of the metal gate.
Public/Granted literature
- US20150340486A1 CONDUCTIVE SPLINE FOR METAL GATES Public/Granted day:2015-11-26
Information query
IPC分类:
