发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13812941申请日： 2012-08-27
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公开(公告)号： US09548387B2公开(公告)日： 2017-01-17
- 发明人: Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
- 申请人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Science
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Science
- 当前专利权人地址： CN Beijing
- 代理机构： Treasure IP Group, LLC
- 优先权： CN201210260760 20120725
- 国际申请： PCT/CN2012/001154 WO 20120827
- 国际公布： WO2014/015450 WO 20140130
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L29/66
摘要：
The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.
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