Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13812941Application Date: 2012-08-27
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Publication No.: US09548387B2Publication Date: 2017-01-17
- Inventor: Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
- Applicant: Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Science
- Current Assignee: Institute of Microelectronics, Chinese Academy of Science
- Current Assignee Address: CN Beijing
- Agency: Treasure IP Group, LLC
- Priority: CN201210260760 20120725
- International Application: PCT/CN2012/001154 WO 20120827
- International Announcement: WO2014/015450 WO 20140130
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L29/66
Abstract:
The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.
Public/Granted literature
- US20140191335A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-07-10
Information query
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