Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14698909Application Date: 2015-04-29
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Publication No.: US09548401B2Publication Date: 2017-01-17
- Inventor: Jae-Hyun Yoo , Jin-Hyun Noh , Su-Tae Kim , Byeong-Ryeol Lee , Seong-Hun Jang , Jong-Sung Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0162610 20141120
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/94 ; H01L29/78 ; H01L27/06 ; H01L29/10

Abstract:
A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.
Public/Granted literature
- US20160149057A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-05-26
Information query
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