Invention Grant
- Patent Title: Drive for cascode stack of power FETs
- Patent Title (中): 驱动用于级联堆叠的功率FET
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Application No.: US14671553Application Date: 2015-03-27
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Publication No.: US09548739B2Publication Date: 2017-01-17
- Inventor: Vishal Gupta , Chifan Yung , Joseph Duncan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H03K5/12
- IPC: H03K5/12 ; H03K3/00 ; H03K19/0185 ; H03F3/217 ; H03K17/10

Abstract:
Disclosed is a cascode configuration that moves the gate of the cascode substantially without delay relative to an output node by capacitively coupling the latter onto the cascode gates. The passive coupling eliminates the need for actively driving the gates of the cascode. In some embodiments, the only circuitry needed on the cascode gate may be a biasing circuit that limits the swing on the cascode gate between Vmax and 2×Vmax, where Vmax is a transistor device rating.
Public/Granted literature
- US20160285454A1 DRIVE FOR CASCODE STACK OF POWER FETS Public/Granted day:2016-09-29
Information query
IPC分类: