Invention Grant
US09552314B2 Memory system having first and second memory devices and driving method thereof
有权
具有第一和第二存储器件的存储器系统及其驱动方法
- Patent Title: Memory system having first and second memory devices and driving method thereof
- Patent Title (中): 具有第一和第二存储器件的存储器系统及其驱动方法
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Application No.: US14090521Application Date: 2013-11-26
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Publication No.: US09552314B2Publication Date: 2017-01-24
- Inventor: Sun-Young Lim , Dong-Hwi Kim
- Applicant: Samsung Electronics Co., Ltd
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0000365 20130102
- Main IPC: G06F13/24
- IPC: G06F13/24
Abstract:
A memory system includes first and second memory devices, a memory controller configured to control the second memory device, to store a request signal to access the first memory device, and to generate an interrupt signal, and a host configured to receive the request signal in response to the interrupt signal.
Public/Granted literature
- US20140189183A1 MEMORY SYSTEM AND DRIVING METHOD THEREOF Public/Granted day:2014-07-03
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