Invention Grant
- Patent Title: Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications
- Patent Title (中): 用于对器件级自加热对电迁移限制电流规格的影响的有效建模的方法
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Application No.: US14612683Application Date: 2015-02-03
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Publication No.: US09552455B2Publication Date: 2017-01-24
- Inventor: Daniel J. Poindexter , Gregory G. Freeman , Siyuranga O. Koswatta , J. Campbell Scott , Leon J. Sigal , James D. Warnock
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grnd Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grnd Cayman
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.
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