公开(公告)号：US09552455B2

公开(公告)日：2017-01-24

申请号：US14612683

申请日：2015-02-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel J. Poindexter ,  Gregory G. Freeman ,  Siyuranga O. Koswatta ,  J. Campbell Scott ,  Leon J. Sigal ,  James D. Warnock

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5036

Abstract: An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.

Abstract translation: 计算库门最大电流限制的有效方法，其中电流限制包括与最大电流相关联的自热效应的影响。 以自我一致的方式获得最大的当前解决方案，提供了一种在没有广泛的数值计算或模拟的情况下以快速方式确定自相矛盾解决方案的方式。 本方法提供了用于表征CMOS设计中使用的大型门库的实用方法。

公开(公告)号：US20160224717A1

公开(公告)日：2016-08-04

申请号：US14612683

申请日：2015-02-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel J. Poindexter ,  Gregory G. Freeman ,  Siyuranga O. Koswatta ,  J. Campbell Scott ,  Leon J. Sigal ,  James D. Warnock

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5036

Abstract: An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.

Abstract translation: 计算库门最大电流限制的有效方法，其中电流限制包括与最大电流相关联的自热效应的影响。 以自我一致的方式获得最大的当前解决方案，提供了一种在没有广泛的数值计算或模拟的情况下以快速方式确定自相矛盾解决方案的方式。 本方法提供了用于表征CMOS设计中使用的大型门库的实用方法。