Invention Grant
US09552636B2 Detecting defects on a wafer using defect-specific and multi-channel information
有权
使用缺陷特定和多通道信息检测晶片上的缺陷
- Patent Title: Detecting defects on a wafer using defect-specific and multi-channel information
- Patent Title (中): 使用缺陷特定和多通道信息检测晶片上的缺陷
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Application No.: US14811409Application Date: 2015-07-28
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Publication No.: US09552636B2Publication Date: 2017-01-24
- Inventor: Kenong Wu , Lisheng Gao , Grace Hsiu-Ling Chen , David W. Shortt
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corp.
- Current Assignee: KLA-Tencor Corp.
- Current Assignee Address: US CA Milpitas
- Agent Ann Marie Mewherter
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G01N21/95 ; H01L21/66 ; G01N21/88 ; G01N21/956

Abstract:
Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.
Public/Granted literature
- US20160027165A1 Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information Public/Granted day:2016-01-28
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