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US09552852B2 Doped metal-insulator-transition latch circuitry 有权
掺杂的金属 - 绝缘体转换锁存电路

Doped metal-insulator-transition latch circuitry
Abstract:
Some embodiments of the present invention may include one, or more, of the following features, characteristics or advantages: (i) latch device including multiple Ecrit material regions all electrically connected to a common terminal (sometimes structured and shaped in the form of a storage plate conductor); (ii) bi-stable three-terminal latch device using two Ecrit property regions; (iii) three-terminal, two-Ecrit-region latch device where, for each Ecrit region, (Vdd−Vss) divided by (region thickness, dn) is greater than the region's Ecrit value; or (iv) use of multiple Ecrit material region latch devices to provide data storage instrumentality in a static memory device.
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