Invention Grant
US09552998B2 Thin film transistor, method of manufacturing thin film transistor and flat panel display having the thin film transistor
有权
薄膜晶体管,制造薄膜晶体管的方法和具有薄膜晶体管的平板显示器
- Patent Title: Thin film transistor, method of manufacturing thin film transistor and flat panel display having the thin film transistor
- Patent Title (中): 薄膜晶体管,制造薄膜晶体管的方法和具有薄膜晶体管的平板显示器
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Application No.: US14558458Application Date: 2014-12-02
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Publication No.: US09552998B2Publication Date: 2017-01-24
- Inventor: Myoung-Geun Cha , Sang-Ho Park , Hyun-Jae Na , Yoon-Ho Khang , Dae-Ho Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2014-0006534 20140120
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/477 ; H01L27/12 ; H01L29/786 ; H01L29/45 ; H01L29/66 ; H01L27/32

Abstract:
A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.
Public/Granted literature
Information query
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