A wiring structure thereof includes a first interlayer insulating film, a first wiring and a first electrode for the capacitive element embedded in the first interlayer insulating film, a barrier insulating film formed over the first interlayer insulating film to cover the wiring and the electrode, a second interlayer insulating film formed over the barrier insulating film, and a second wiring and a second electrode for the capacitive element embedded in the second interlayer insulating film. The lower surface of the second wiring is positioned in the middle of the thickness of the second interlayer layer film, and the lower surface of the second electrode is in contact with the barrier insulating film. The barrier insulating film of a portion interposed between both electrodes functions as a capacitance insulating film of the capacitive element and is thicker than the barrier insulating film of a portion covering the first wiring.