Invention Grant
- Patent Title: Chemical deposition raw material formed of ruthenium complex and method for producing the same, and chemical deposition method
- Patent Title (中): 由钌络合物形成的化学沉积原料及其制备方法和化学沉积方法
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Application No.: US14422292Application Date: 2013-08-19
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Publication No.: US09556212B2Publication Date: 2017-01-31
- Inventor: Ryosuke Harada , Naoki Nakata , Masayuki Saito
- Applicant: Tanaka Kikinzoku Kogyo K.K.
- Applicant Address: JP Tokyo
- Assignee: Tanaka Kikinzoku Kogyo K.K.
- Current Assignee: Tanaka Kikinzoku Kogyo K.K.
- Current Assignee Address: JP Tokyo
- Agency: Orrick Herrington & Sutcliffe, LLP
- Priority: JP2012-181329 20120820
- International Application: PCT/JP2013/072080 WO 20130819
- International Announcement: WO2014/030609 WO 20140227
- Main IPC: C07F15/00
- IPC: C07F15/00 ; C23C16/18 ; C23C16/46

Abstract:
The present invention provides a raw material, formed of a ruthenium complex, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, wherein the ruthenium complex is a ruthenium complex represented by the following formula, in which carbonyl groups and a fluoroalkyl derivative of a polyene are coordinated to ruthenium. The present invention provides a raw material for chemical deposition having a preferable decomposition temperature, and the production cost therefor is low: (nR-L)Ru(CO)3 [Chemical Formula 1] wherein L is a polyene having a carbon number of from 4 to 8 and 2 to 4 double bonds, wherein the polyene L has n (n≧1) pieces of substituents Rs, wherein the substituents Rs are each a fluoroalkyl group having a carbon number of from 1 to 6 and a fluorine number of from 1 to 13, and in the case when the polyene L has two or more (n≧2) of the substituents Rs, the carbon numbers and the fluorine numbers of the substituents Rs may be different in the same molecule.
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