发明授权
US09558930B2 Mixed lithography approach for e-beam and optical exposure using HSQ
有权
使用HSQ进行电子束和光学曝光的混合光刻方法
- 专利标题： Mixed lithography approach for e-beam and optical exposure using HSQ
- 专利标题（中）： 使用HSQ进行电子束和光学曝光的混合光刻方法
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申请号： US14458887申请日： 2014-08-13
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公开(公告)号： US09558930B2公开(公告)日： 2017-01-31
- 发明人: Josephine B. Chang , Szu-Lin Cheng , Isaac Lauer , Jeffrey W. Sleight
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Michael J. Chang, LLC
- 代理商 Louis J. Percello
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/02 ; H01L21/311 ; H01L21/768 ; H01L21/324 ; H01L23/528
摘要：
In one aspect, a method of forming a wiring layer on a wafer is provided which includes: depositing a HSQ layer onto the wafer; cross-linking a first portion(s) of the HSQ layer using e-beam lithography; depositing a hardmask material onto the HSQ layer; patterning the hardmask using optical lithography, wherein the patterned hardmask covers a second portion(s) of the HSQ layer; patterning the HSQ layer using the patterned hardmask in a manner such that i) the first portion(s) of the HSQ layer remain and ii) the second portion(s) of the HSQ layer covered by the patterned hardmask remain, wherein by way of the patterning step trenches are formed in the HSQ layer; and filling the trenches with a conductive material to form the wiring layer on the wafer.
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