Invention Grant
- Patent Title: Apparatus and method for fabricating epi wafer and epi wafer
- Patent Title (中): 用于制造epi晶片和epi晶片的装置和方法
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Application No.: US14354058Application Date: 2012-10-24
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Publication No.: US09559031B2Publication Date: 2017-01-31
- Inventor: Min Young Hwang
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2011-0109020 20111024
- International Application: PCT/KR2012/008779 WO 20121024
- International Announcement: WO2013/062317 WO 20130502
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L23/31 ; H01L21/02 ; H01L29/16
Abstract:
A method for fabricating an epi wafer according to the embodiment comprises depositing an epi layer on a wafer in a first chamber; transferring the wafer to a second chamber connected to the first chamber; forming a protective layer on the wafer in the second chamber; and cooling the wafer in the second chamber.Further, an apparatus for fabricating an epi wafer according to the embodiment comprises a first chamber comprising an epi deposition part; a second chamber comprising a protective layer forming part and a cooling part; and a wafer transfer apparatus connected to lower portions of the first chamber and the second chamber.
Public/Granted literature
- US20140319544A1 APPARATUS AND METHOD FOR FABRICATING EPI WAFER AND EPI WAFER Public/Granted day:2014-10-30
Information query
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