Invention Grant
- Patent Title: Semiconductor device with modified current distribution
- Patent Title (中): 具有改进电流分布的半导体器件
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Application No.: US14726005Application Date: 2015-05-29
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Publication No.: US09559086B2Publication Date: 2017-01-31
- Inventor: Shizhong Mei , Victor Wong , Jeffrey P. Wright
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/48 ; H01L25/00 ; H01L23/00 ; H01L23/538

Abstract:
Semiconductor devices having modified current distribution and methods of forming the same are described herein. As an example, a memory die in contact with a logic die can be configured to draw a sum amount of current from a current source. The memory die can include a plurality of through-substrate vias (TSVs) formed in the memory die and configured to provide the sum amount of current to the memory die from the current source. The memory die can include at least two interconnection contacts associated with a first TSV closer to the current source that are not connected. The memory die can include an electrical connection between at least two interconnection contacts associated with a second TSV that is further in distance from the current source than the first TSV.
Public/Granted literature
- US20160351551A1 SEMICONDUCTOR DEVICE WITH MODIFIED CURRENT DISTRIBUTION Public/Granted day:2016-12-01
Information query
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