Invention Grant
- Patent Title: Image sensor and methods of manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
-
Application No.: US14878631Application Date: 2015-10-08
-
Publication No.: US09559138B2Publication Date: 2017-01-31
- Inventor: Yi-Tae Kim , Kyung-Ho Lee , Dong-Young Jang , Sung-Ho Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0136717 20141010
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L27/146

Abstract:
An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.
Public/Granted literature
- US20160104740A1 IMAGE SENSOR AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2016-04-14
Information query
IPC分类: