Invention Grant
US09559306B2 Field-effect transistors based on macroscopically oriented polymers with high saturation mobility
有权
基于具有高饱和迁移率的宏观取向聚合物的场效应晶体管
- Patent Title: Field-effect transistors based on macroscopically oriented polymers with high saturation mobility
- Patent Title (中): 基于具有高饱和迁移率的宏观取向聚合物的场效应晶体管
-
Application No.: US14426487Application Date: 2013-09-06
-
Publication No.: US09559306B2Publication Date: 2017-01-31
- Inventor: Hsin-Rong Tseng , Lei Ying , Ben B. Y. Hsu , Christopher J. Takacs , Guillermo C. Bazan , Alan J. Heeger
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- International Application: PCT/US2013/058546 WO 20130906
- International Announcement: WO2014/039847 WO 20140313
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05

Abstract:
Methods and materials for preparing organic semiconducting layers include, for example, one used in an organic semiconductor device including a substrate with a nano structured surface and an organic semiconductor film overlying the nanostructured surface. The semiconductor film is typically formed from macroscopically ordered polymer fibers made from selected conjugate polymer compounds. Such polymer fibers synthesized from selected conjugated polymer compounds and directionally aligned in organic semiconductor devices can provide these devices improved functional properties, including for example, unexpectedly high field effect saturation mobilities.
Public/Granted literature
- US20150214486A1 FIELD-EFFECT TRANSISTORS BASED ON MACROSCOPICALLY ORIENTED POLYMERS Public/Granted day:2015-07-30
Information query
IPC分类: