Invention Grant
- Patent Title: Electrostatic discharge protection for CMOS amplifier
- Patent Title (中): CMOS放大器的静电放电保护
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Application No.: US14632646Application Date: 2015-02-26
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Publication No.: US09559640B2Publication Date: 2017-01-31
- Inventor: Ahmed Abdel Monem Youssef , Prasad Srinivasa Siva Gudem , Eugene Robert Worley , Dongling Pan , Li-Chung Chang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Paradice and Li LLP
- Main IPC: H03F1/52
- IPC: H03F1/52 ; H03F3/193 ; H03F3/21

Abstract:
A CMOS amplifier including electrostatic discharge (ESD) protection circuits is disclosed. In one embodiment, the CMOS amplifier may include a PMOS transistor, a NMOS transistor, primary protection diodes, and one or more auxiliary protection diodes to limit a voltage difference between terminals of the CMOS amplifier. In some embodiments, the auxiliary protection diodes may limit the voltage difference between an input terminal of the CMOS amplifier and a supply voltage, the input terminal of the CMOS amplifier and ground, and the input terminal and the output terminal of the CMOS amplifier.
Public/Granted literature
- US20160254789A1 ELECTROSTATIC DISCHARGE PROTECTION FOR CMOS AMPLIFIER Public/Granted day:2016-09-01
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