Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US15000433Application Date: 2016-01-19
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Publication No.: US09564185B1Publication Date: 2017-02-07
- Inventor: Kosuke Yanagidaira
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C7/22 ; G11C8/06 ; G11C7/12 ; G11C8/18

Abstract:
According to one embodiment, a semiconductor memory device includes a memory including a memory cell array, and an input/output pin configured to transfer data, a command, and an address from an external to the memory. The memory includes a termination circuit provided between the input/output pin and the memory cell array, and configured to supply a first voltage having a first amplitude in a first transfer mode and supply a second voltage having a second amplitude in a second transfer mode, a first intermediate value of the first amplitude being different from a second intermediate value of the second amplitude.
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