Invention Grant
- Patent Title: Photonic degradation monitoring for semiconductor devices
- Patent Title (中): 半导体器件的光子劣化监测
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Application No.: US14705268Application Date: 2015-05-06
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Publication No.: US09564854B2Publication Date: 2017-02-07
- Inventor: Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
- Applicant: Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: G01N21/64
- IPC: G01N21/64 ; H02S50/15

Abstract:
Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
Public/Granted literature
- US20160329864A1 PHOTONIC DEGRADATION MONITORING FOR SEMICONDUCTOR DEVICES Public/Granted day:2016-11-10
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