公开(公告)号：US20170149383A1

公开(公告)日：2017-05-25

申请号：US15425709

申请日：2017-02-06

申请人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

CPC分类号： H02S50/15 ,  G01N21/6408 ,  G01N21/6489 ,  G01N2201/06113 ,  G01N2201/0621

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US09564854B2

公开(公告)日：2017-02-07

申请号：US14705268

申请日：2015-05-06

申请人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： G01N21/64 ,  H02S50/15

CPC分类号： H02S50/15 ,  G01N21/6408 ,  G01N21/6489 ,  G01N2201/06113 ,  G01N2201/0621

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

摘要翻译： 对半导体测试方法和半导体测试设备进行描述。 在一个示例中，用于测试半导体的方法可以包括在半导体上施加光以引起光子降解。 该方法还可以包括接收从半导体施加的光引起的光致发光测量，并从光致发光测量监测半导体的光子劣化。

公开(公告)号：US20160329864A1

公开(公告)日：2016-11-10

申请号：US14705268

申请日：2015-05-06

申请人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

CPC分类号： H02S50/15 ,  G01N21/6408 ,  G01N21/6489 ,  G01N2201/06113 ,  G01N2201/0621

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

摘要翻译： 对半导体测试方法和半导体测试设备进行描述。 在一个示例中，用于测试半导体的方法可以包括在半导体上施加光以引起光子降解。 该方法还可以包括接收从半导体施加的光引起的光致发光测量，并从光致发光测量监测半导体的光子劣化。

公开(公告)号：US20170222072A1

公开(公告)日：2017-08-03

申请号：US15493021

申请日：2017-04-20

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US20160043267A1

公开(公告)日：2016-02-11

申请号：US14919049

申请日：2015-10-21

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US09634177B2

公开(公告)日：2017-04-25

申请号：US14919049

申请日：2015-10-21

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/20 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US20160177439A1

公开(公告)日：2016-06-23

申请号：US14578332

申请日：2014-12-19

申请人： Yu-Chen Shen ,  Taiqing Qiu ,  Robe Woehl ,  Kieran Mark Tracy ,  Mukul Agrawal

发明人： Yu-Chen Shen ,  Taiqing Qiu ,  Robe Woehl ,  Kieran Mark Tracy ,  Mukul Agrawal

IPC分类号： C23C14/50 ,  C23C14/34

CPC分类号： C23C14/50 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01J37/32715

摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.

摘要翻译： 描述了溅射工具。 在一个实施例中，用于支撑晶片的装置包括具有用于接收晶片的凹陷的托盘。 托盘包括在凹陷下方的开口，并且凹陷中的边缘将晶片支撑在开口上。 盖子至少部分地覆盖开口。 在一个示例中，盖可以是具有一个或多个孔的板，并且管可以位于盖中的每个孔下方。 在一个实施例中，晶片处理系统包括处理室和具有凹陷的托盘以接收晶片。 托盘在凹陷下方具有开口，并且凹陷中的边缘将晶片支撑在开口上方。 在一个这样的实施例中，盖至少部分地覆盖开口。 根据一个实施例，能量吸收材料设置在托盘中的开口下方。

公开(公告)号：US20160284923A1

公开(公告)日：2016-09-29

申请号：US14866239

申请日：2015-09-25

申请人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

摘要翻译： 本文描述了制造太阳能电池的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的方法包括通过基底表面的自由基氧化或等离子体氧化在基板的表面上形成薄的电介质层。 该方法还涉及在薄介电层上形成硅层。 该方法还涉及从硅层形成多个发射极区域。

公开(公告)号：US06300600B1

公开(公告)日：2001-10-09

申请号：US09373894

申请日：1999-08-12

申请人： Christopher Ratliff ,  Taiqing Qiu ,  Jeff Kowalski ,  Morteza Yadollahi ,  Saeed Sedehi

发明人： Christopher Ratliff ,  Taiqing Qiu ,  Jeff Kowalski ,  Morteza Yadollahi ,  Saeed Sedehi

IPC分类号： F27B514

CPC分类号： C23C16/463 ,  C23C16/455 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/14 ,  F27B5/14 ,  F27B2005/161 ,  F27D1/1858 ,  F27D2003/0075 ,  H01L21/67109

摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

摘要翻译： 公开了一种用于晶片热处理的设备。 该装置包括具有热源的加热室。 冷却室位于加热室附近并且包括冷却源。 晶片保持器构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。 一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时所限定的通道。

公开(公告)号：US09559245B2

公开(公告)日：2017-01-31

申请号：US14747874

申请日：2015-06-23

申请人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Périne Jaffrennou ,  Nada Habka ,  Sergej Filonovich

发明人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Périne Jaffrennou ,  Nada Habka ,  Sergej Filonovich

IPC分类号： H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/545 ,  Y02E10/547 ,  Y02P70/521

摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

摘要翻译： 这里描述的是制造太阳能电池的方法。 在一个示例中，制造太阳能电池的方法包括在与基板的光接收表面相对的基板的背面上形成非晶介质层。 该方法还包括通过等离子体增强化学气相沉积（PECVD）在非晶介质层上形成微晶硅层。 该方法还包括通过PECVD在微晶硅层上形成非晶硅层。 该方法还包括退火微晶硅层和非晶硅层，以从微晶硅层和非晶硅层形成均匀的多晶硅层。 该方法还包括从均质多晶硅层形成发射极区域。