Invention Grant
- Patent Title: Broadband radio frequency power amplifiers, and methods of manufacture thereof
- Patent Title (中): 宽带射频功率放大器及其制造方法
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Application No.: US14529407Application Date: 2014-10-31
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Publication No.: US09564861B2Publication Date: 2017-02-07
- Inventor: Lei Zhao , Jeffrey K. Jones , Basim H. Noori , Michael E. Watts
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F1/56 ; H03F1/42 ; H03F1/02 ; H03F3/193 ; H01L23/66 ; H01L23/00 ; H01L23/31

Abstract:
An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.
Public/Granted literature
- US20160126905A1 BROADBAND RADIO FREQUENCY POWER AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF Public/Granted day:2016-05-05
Information query
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