Invention Grant
- Patent Title: Post-silicon tuning in voltage control of semiconductor integrated circuits
- Patent Title (中): 半导体集成电路电压控制后硅调谐
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Application No.: US14296042Application Date: 2014-06-04
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Publication No.: US09564896B2Publication Date: 2017-02-07
- Inventor: Jerry Chang-Jui Kao , Chien-Ju Chao , Chin-Shen Lin , Nitesh Katta , Kuo-Nan Yang , Chung-Hsing Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H02M3/157 ; H02M3/155 ; H02M1/00 ; H02M3/156
Abstract:
A circuit is disclosed that includes a plurality of voltage control circuits and a control module. Each of the voltage control circuits is controlled by a control signal. The control module is configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data and second predetermined data.
Public/Granted literature
- US20150091543A1 POST-SILICON TUNING IN VOLTAGE CONTROL OF SEMICONDUCTOR INTEGRATED CIRCUITS Public/Granted day:2015-04-02
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