Invention Grant
- Patent Title: Infrared sensor
- Patent Title (中): 红外传感器
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Application No.: US14375065Application Date: 2013-01-29
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Publication No.: US09568371B2Publication Date: 2017-02-14
- Inventor: Kazuyoshi Tari , Mototaka Ishikawa , Keiji Shirata , Kenzo Nakamura
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent Howard M. Gitten; James E. Armstrong, IV
- Priority: JP2012-019431 20120201
- International Application: PCT/JP2013/000467 WO 20130129
- International Announcement: WO2013/114861 WO 20130808
- Main IPC: G01J5/00
- IPC: G01J5/00 ; G01J5/10 ; G01J5/08 ; G01J5/06 ; H05K1/02 ; H01L37/02 ; G01J5/20 ; H01L27/144 ; G03G15/20 ; H05K1/18

Abstract:
Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.
Public/Granted literature
- US20140374596A1 INFRARED SENSOR Public/Granted day:2014-12-25
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