Invention Grant
- Patent Title: Circuit and method for generating a bandgap reference voltage
- Patent Title (中): 用于产生带隙参考电压的电路和方法
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Application No.: US14020949Application Date: 2013-09-09
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Publication No.: US09568933B2Publication Date: 2017-02-14
- Inventor: Ansgar Pottbaecker , Panny Cai
- Applicant: STMicroelectronics R&D (Shanghai) Co. Ltd.
- Applicant Address: CN Shanghai DE Ascheim-Dornach
- Assignee: STMicroelectronics R&D (Shanghai) Co. Ltd.,STMicroelectronics Application GmbH
- Current Assignee: STMicroelectronics R&D (Shanghai) Co. Ltd.,STMicroelectronics Application GmbH
- Current Assignee Address: CN Shanghai DE Ascheim-Dornach
- Agency: Gardere Wynne Sewell, LLP
- Priority: CN201210341692 20120911
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/08 ; G05F3/30 ; G05F3/22

Abstract:
A bandgap reference voltage generator includes a bipolar assembly having a first resistor, a first branch and a second branch that is in parallel with the first branch. The first branch includes a first bipolar transistor with a base coupled to a fixed voltage. The second branch includes a second bipolar transistor with a base coupled to the fixed voltage and a second resistor coupled in series with the second bipolar transistor. A differential module is coupled to the first and second bipolar transistors and configured to balance the currents in the first and the second branches. The bandgap reference voltage is output at a node to which the first resistor is connected.
Public/Granted literature
- US20140070788A1 CIRCUIT AND METHOD FOR GENERATING A BANDGAP REFERENCE VOLTAGE Public/Granted day:2014-03-13
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