Invention Grant
- Patent Title: Repair of memory devices using volatile and non-volatile memory
- Patent Title (中): 使用易失性和非易失性存储器修复存储器件
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Application No.: US15156165Application Date: 2016-05-16
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Publication No.: US09570201B2Publication Date: 2017-02-14
- Inventor: Donald M. Morgan , Sujeet Ayyapureddi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C29/00

Abstract:
Apparatus and methods for hybrid post package repair are disclosed. One such apparatus may include a package including memory cells and volatile memory. The volatile memory may be configured to store defective address data corresponding to a first portion of the memory cells that are deemed defective post-packaging. The apparatus may also include a decoder configured to select a second portion of the memory cells instead of the first portion of the memory cells when received current address data corresponding to an address to be accessed matches the defective address data stored in the volatile memory. The apparatus may also include non-volatile memory in the package. The apparatus may also include a mapping logic circuit in the package. The mapping logic circuit may be configured to program the replacement address data to the non-volatile memory subsequent to the defective address data being stored to the volatile memory.
Public/Granted literature
- US20160307647A1 REPAIR OF MEMORY DEVICES USING VOLATILE AND NON-VOLATILE MEMORY Public/Granted day:2016-10-20
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