发明授权
- 专利标题： Semiconductor substrates and methods for processing semiconductor substrates
- 专利标题（中）： 半导体衬底和半导体衬底的处理方法
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申请号： US14798796申请日： 2015-07-14
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公开(公告)号： US09570291B2公开(公告)日： 2017-02-14
- 发明人: Shishir Ray , Sandeep Gaan , Sheldon Meyers , Nisha Pillai , Edmund Kenneth Banghart , Kyle Jung
- 申请人： GLOBALFOUNDRIES, Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES, INC.
- 当前专利权人： GLOBALFOUNDRIES, INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Lorenz & Kopf, LLP
- 主分类号： G03F7/26
- IPC分类号： G03F7/26 ; H01L21/02 ; H01L29/16
摘要：
Semiconductor substrates and methods for processing semiconductor substrates are provided. A method for processing a semiconductor substrate includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.
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