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US09570344B2 Method to protect MOL metallization from hardmask strip process 有权
保护MOL金属化免受硬掩模剥离过程的方法

Method to protect MOL metallization from hardmask strip process
Abstract:
A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation.
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