Invention Grant
US09570359B2 Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device
有权
基板结构,互补金属氧化物半导体器件,以及互补金属氧化物半导体器件的制造方法
- Patent Title: Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device
- Patent Title (中): 基板结构,互补金属氧化物半导体器件,以及互补金属氧化物半导体器件的制造方法
-
Application No.: US14510354Application Date: 2014-10-09
-
Publication No.: US09570359B2Publication Date: 2017-02-14
- Inventor: Moon-seung Yang , Mohammad Rakib Uddin , Myoung-jae Lee , Sang-moon Lee , Sung-hun Lee , Seong-ho Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2013-0131507 20131031
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/8238 ; H01L27/092 ; H01L21/02

Abstract:
A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.
Public/Granted literature
Information query
IPC分类: