Invention Grant
US09570359B2 Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device 有权
基板结构,互补金属氧化物半导体器件,以及互补金属氧化物半导体器件的制造方法

Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device
Abstract:
A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.
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