Invention Grant
- Patent Title: Multiple layer interface formation for semiconductor structure
- Patent Title (中): 用于半导体结构的多层界面形成
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Application No.: US14523640Application Date: 2014-10-24
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Publication No.: US09570572B2Publication Date: 2017-02-14
- Inventor: Suraj K. Patil , Min-hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Kristian E. Ziegler
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L29/45 ; H01L21/28 ; H01L21/324 ; H01L29/66
Abstract:
There is set forth herein a method of fabricating a contact interface formation. A layer of Ti metal can be deposited on a substrate and a layer of Ni metal can be deposited over the layer of Ti metal. An annealing process can be performed to form a contact interface formation having Ti in reacted form and Ni in reacted form.
Public/Granted literature
- US20160118468A1 MULTIPLE LAYER INTERFACE FORMATION FOR SEMICONDUCTOR STRUCTURE Public/Granted day:2016-04-28
Information query
IPC分类:
