Invention Grant
- Patent Title: Structure and formation method of FinFET device
- Patent Title (中): FinFET器件的结构和形成方法
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Application No.: US14622180Application Date: 2015-02-13
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Publication No.: US09570613B2Publication Date: 2017-02-14
- Inventor: Kai-Hsuan Lee , Cheng-Yu Yang , Hsiang-Ku Shen , Han-Ting Tsai , Yimin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/161 ; H01L29/36 ; H01L21/02 ; H01L29/66 ; H01L29/49 ; H01L21/3065 ; H01L21/762 ; H01L29/80 ; H01L29/165
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack over a portion of the fin structure, and the fin structure includes an intermediate portion under the gate stack and upper portions besides the intermediate portion. The semiconductor device structure further includes a contact layer over the fin structure. The contact layer includes a metal material, and the upper portions of the fin structure also include the metal material.
Public/Granted literature
- US20160240651A1 STRUCTURE AND FORMATION METHOD OF FINFET DEVICE Public/Granted day:2016-08-18
Information query
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