Invention Grant
US09570645B2 Photodiode and method of manufacturing the same, and X-ray detector and method of manufacturing the same
有权
光电二极管及其制造方法，以及X射线检测器及其制造方法
- Patent Title: Photodiode and method of manufacturing the same, and X-ray detector and method of manufacturing the same
- Patent Title (中): 光电二极管及其制造方法，以及X射线检测器及其制造方法
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Application No.: US14890587Application Date: 2015-03-25
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Publication No.: US09570645B2Publication Date: 2017-02-14
- Inventor: Lei Zhao , Wei Guo
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: CN201410696940 20141126
- International Application: PCT/CN2015/075030 WO 20150325
- International Announcement: WO2016/082391 WO 20160602
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/105 ; H01L31/18 ; G01T1/24
Abstract:
A photodiode and a method of manufacturing the same, and an X-ray detector and a method of manufacturing the same are provided. The PIN photodiode includes a first doped layer, a second doped layer and an intrinsic layer between the first and second doped layers, the first doped layer is provided on a source/drain electrode layer of a thin film transistor of the X-ray detector. A heavily-doped region is provided in the second doped layer, has a dosage concentration larger than that of the second doped layer, and is electrically connected with a cathode of the PIN photodiode.
Public/Granted literature
- US20160359075A1 PHOTODIODE AND METHOD OF MANUFACTURING THE SAME, AND X-RAY DETECTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-12-08
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