Invention Grant
- Patent Title: Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
- Patent Title (中): 磁阻结构，包括其的磁性随机存取存储器件以及制造磁阻结构的方法
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Application No.: US14167553Application Date: 2014-01-29
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Publication No.: US09570675B2Publication Date: 2017-02-14
- Inventor: Kee-won Kim , Kwang-seok Kim , Sung-chul Lee , Young-man Jang , Ung-hwan Pi
- Applicant: Kee-won Kim , Kwang-seok Kim , Sung-chul Lee , Young-man Jang , Ung-hwan Pi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0025745 20130311
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08 ; H01L27/22
Abstract:
Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
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