Invention Grant
US09570688B2 Semiconductor materials prepared from bridged bithiazole copolymers
有权
由桥联二噻唑共聚物制备的半导体材料
- Patent Title: Semiconductor materials prepared from bridged bithiazole copolymers
- Patent Title (中): 由桥联二噻唑共聚物制备的半导体材料
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Application No.: US14620755Application Date: 2015-02-12
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Publication No.: US09570688B2Publication Date: 2017-02-14
- Inventor: Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Bo Zhu , Johan Sebastian Basuki
- Applicant: BASF SE , POLYERA CORPORATION
- Applicant Address: DE Ludwigshafen US NJ Princeton
- Assignee: BASF SE,Polyera Corporation
- Current Assignee: BASF SE,Polyera Corporation
- Current Assignee Address: DE Ludwigshafen US NJ Princeton
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP10172083 20100805
- Main IPC: C08G75/00
- IPC: C08G75/00 ; H01L51/00 ; C07D495/04 ; C07D513/04 ; C07D513/14 ; C08G61/12 ; H01L51/05
Abstract:
The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.
Public/Granted literature
- US20150162546A1 SEMICONDUCTOR MATERIALS PREPARED FROM BRIDGED BITHIAZOLE COMPOLYERS Public/Granted day:2015-06-11
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