Invention Grant
- Patent Title: Method of strain engineering and related optical device using a gallium and nitrogen containing active region
- Patent Title (中): 应变工程方法和使用含镓和氮的活性区域的相关光学器件
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Application No.: US15177956Application Date: 2016-06-09
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Publication No.: US09570888B1Publication Date: 2017-02-14
- Inventor: James W. Raring , Christiane Poblenz Elsass
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: SORAA LASER DIODE, INC.
- Current Assignee: SORAA LASER DIODE, INC.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01S5/343 ; H01S5/22 ; H01S5/20 ; H01S5/30 ; H01S5/32 ; H01S5/34
Abstract:
An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
Information query
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