Invention Grant
US09576626B2 Nonvolatile memory device and storage device having the same
有权
非易失性存储器件和具有该非易失性存储器件的存储器件
- Patent Title: Nonvolatile memory device and storage device having the same
- Patent Title (中): 非易失性存储器件和具有该非易失性存储器件的存储器件
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Application No.: US14600366Application Date: 2015-01-20
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Publication No.: US09576626B2Publication Date: 2017-02-21
- Inventor: Dong-Su Jang , Taesung Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0065921 20140530
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C29/02 ; G11C29/44

Abstract:
A nonvolatile memory device includes a data path; and a FIFO memory including a plurality of registers connected to the data path. The plurality of registers sequentially receive data from the data path in response to data path input clocks and sequentially output the received data to an input/output pad in response to data path output clocks. The data path output clocks are clocks that are generated by delaying the data path input clocks as long as a delay time.
Public/Granted literature
- US20150348605A1 NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE HAVING THE SAME Public/Granted day:2015-12-03
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