A magnetic memory and methods for providing and programming the magnetic memory are described. The memory includes storage cells, magnetic oscillator(s) and bit lines. Each storage cell includes magnetic junction(s) having a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a first magnetic anisotropy at room temperature and a second magnetic anisotropy at a minimum switching temperature due to at least the write current. The second magnetic anisotropy is not more than ninety percent of the first magnetic anisotropy. The first and second magnetic anisotropies correspond to first and second ferromagnetic resonance (FMR) frequencies. The magnetic oscillator(s) have a frequency range. The first FMR frequency is outside of the frequency range. The second FMR frequency is within the frequency range.