Invention Grant
- Patent Title: Memory cell sensing
- Patent Title (中): 记忆单元感应
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Application No.: US14663179Application Date: 2015-03-19
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Publication No.: US09576674B2Publication Date: 2017-02-21
- Inventor: Matthew Goldman , Pranav Kalavade , Uday Chandrasekhar , Mark A. Helm
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/28 ; G11C16/26 ; G11C16/34 ; G06F12/08 ; G11C16/04

Abstract:
This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.
Public/Granted literature
- US20150194218A1 MEMORY CELL SENSING Public/Granted day:2015-07-09
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