公开(公告)号：US20150194218A1

公开(公告)日：2015-07-09

申请号：US14663179

申请日：2015-03-19

Applicant: Micron Technology, Inc.

Inventor： Matthew Goldman ,  Pranav Kalavade ,  Uday Chandrasekhar ,  Mark A. Helm

IPC: G11C16/28 ,  G06F12/08 ,  G11C16/04

CPC classification number: G11C16/28 ,  G06F12/0875 ,  G06F2212/452 ,  G11C16/04 ,  G11C16/26 ,  G11C16/3427

Abstract: This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.

Abstract translation: 本公开涉及存储器单元感测。 一种或多种方法包括确定耦合到第一数据线的第一存储器单元的数据状态，确定耦合到第三数据线的第三存储器单元的数据状态，传送第一和第三数据线中的至少一个的确定数据 存储单元连接到与第二存储器单元耦合的第二数据线相对应的数据线控制单元，第二数据线与第一数据线和第三数据线相邻，并且确定第二存储器单元的数据状态 至少部分地基于所转移的确定的数据。

公开(公告)号：US09576674B2

公开(公告)日：2017-02-21

申请号：US14663179

申请日：2015-03-19

Applicant: Micron Technology, Inc.

Inventor： Matthew Goldman ,  Pranav Kalavade ,  Uday Chandrasekhar ,  Mark A. Helm

IPC: G11C16/06 ,  G11C16/28 ,  G11C16/26 ,  G11C16/34 ,  G06F12/08 ,  G11C16/04

CPC classification number: G11C16/28 ,  G06F12/0875 ,  G06F2212/452 ,  G11C16/04 ,  G11C16/26 ,  G11C16/3427

Abstract: This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.

Abstract translation: 本公开涉及存储器单元感测。 一种或多种方法包括确定耦合到第一数据线的第一存储器单元的数据状态，确定耦合到第三数据线的第三存储器单元的数据状态，传送第一和第三数据线中的至少一个的确定数据 存储单元连接到与第二存储器单元耦合的第二数据线相对应的数据线控制单元，第二数据线与第一数据线和第三数据线相邻，并且确定第二存储器单元的数据状态 至少部分地基于所转移的确定的数据。