发明授权
- 专利标题： Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device
- 专利标题（中）： 制造外延硅晶片，外延硅晶片的方法和制造固态图像感测装置的方法
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申请号： US15182443申请日： 2016-06-14
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公开(公告)号： US09576800B2公开(公告)日： 2017-02-21
- 发明人: Takeshi Kadono
- 申请人： SUMCO Corporation
- 申请人地址： JP Minato-ku
- 专利权人： SUMCO Corporation
- 当前专利权人： SUMCO Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Christensen O'Connor Johnson Kindness PLLC
- 优先权： JP2012-249221 20121113
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/02 ; H01L27/146 ; H01L21/322
摘要：
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.
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