公开(公告)号：USRE49657E1

公开(公告)日：2023-09-12

申请号：US17038941

申请日：2020-09-30

申请人： SUMCO CORPORATION

发明人： Takuro Iwanaga ,  Kazunari Kurita ,  Takeshi Kadono

IPC分类号： H01L21/322 ,  H01L21/265 ,  H01L21/02 ,  H01L29/36

CPC分类号： H01L21/3221 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26566 ,  H01L29/36

摘要： Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

公开(公告)号：US20160293426A1

公开(公告)日：2016-10-06

申请号：US15182443

申请日：2016-06-14

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/265 ,  H01L21/322 ,  H01L27/146 ,  H01L21/02

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer.A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

摘要翻译： 一种外延硅晶片的制造方法，其特征在于，包括：第一工序，在硅晶片的表面部照射不含位错簇的硅晶片和具有簇离子的COP，形成由所述簇离子的构成元素形成的改性层; 以及在硅晶片的改性层上形成外延层的第二步骤。

公开(公告)号：US10453682B2

公开(公告)日：2019-10-22

申请号：US15996924

申请日：2018-06-04

申请人： SUMCO CORPORATION

发明人： Takuro Iwanaga ,  Kazunari Kurita ,  Takeshi Kadono

IPC分类号： H01L21/265 ,  H01L21/322 ,  H01L29/34 ,  H01L21/02 ,  H01L29/36

摘要： Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

公开(公告)号：US10396120B2

公开(公告)日：2019-08-27

申请号：US16061692

申请日：2016-12-05

申请人： SUMCO CORPORATION

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L21/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01J37/317 ,  H01L21/265 ,  H01L31/18 ,  H01L21/322 ,  H01L21/324

摘要： A semiconductor epitaxial wafer production method that can increase the peak concentration of hydrogen in a surface portion of a semiconductor wafer after epitaxial layer formation is provided. A method of producing a semiconductor epitaxial wafer comprises: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing hydrogen as a constituent element, to form a modifying layer formed from, as a solid solution, a constituent element of the cluster ions including hydrogen in a surface portion of the semiconductor wafer; a second step of, after the first step, irradiating the semiconductor wafer with electromagnetic waves of a frequency of 300 MHz or more and 3 THz or less, to heat the semiconductor wafer; and a third step of, after the second step, forming an epitaxial layer on the modifying layer of the semiconductor wafer.

公开(公告)号：US20160148964A1

公开(公告)日：2016-05-26

申请号：US14946661

申请日：2015-11-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L27/146 ,  H01L29/36

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer.A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

摘要翻译： 提供了一种外延硅晶片，其由位错簇引起的外延缺陷和通过较高的吸杂能力实现的具有减少的金属污染的COP和一种制造外延晶片的方法。 一种外延硅晶片的制造方法，其特征在于，包括：第一工序，在硅晶片的表面部照射不含位错簇的硅晶片和具有簇离子的COP，形成由所述簇离子的构成元素形成的改性层; 以及在硅晶片的改性层上形成外延层的第二步骤。

公开(公告)号：US09117676B2

公开(公告)日：2015-08-25

申请号：US14078286

申请日：2013-11-12

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/02 ,  H01L27/146

CPC分类号： H01L29/36 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L27/14687 ,  H01L29/167

摘要： Provided is an epitaxial silicon wafer with reduced metal contamination achieved by higher gettering capability and a method of efficiently producing the same.The method of producing an epitaxial wafer includes a wafer production step of pulling a single crystal silicon ingot having a COP formation region by Czochralski process, and subjecting the obtained single crystal silicon ingot to slicing, thereby producing a silicon wafer 10 including COPs; a cluster ion irradiation step of irradiating the produced silicon wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16, contained as a solid solution in a surface portion 10A of the silicon wafer 10; and an epitaxial layer formation step of forming an epitaxial layer 20 on the modifying layer 18 of the silicon wafer 10.

摘要翻译： 提供了通过更高的吸气能力实现的具有减少的金属污染的外延硅晶片以及有效地制造其的方法。 制造外延晶片的方法包括通过切克劳斯基工艺拉制具有COP形成区域的单晶硅锭并对所得单晶硅锭进行切片的晶片制造步骤，从而制造包括COP的硅晶片10; 聚簇离子照射步骤，用聚簇离子16照射所产生的硅晶片10，以形成由硅离子16的表面部分10A中作为固溶体包含的簇离子16的构成元素形成的改性层18; 以及在硅晶片10的改性层18上形成外延层20的外延层形成步骤。

公开(公告)号：US20240282801A1

公开(公告)日：2024-08-22

申请号：US18609418

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324 ,  H01L29/167

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/3221 ,  H01L21/324 ,  H01L27/14689 ,  H01L29/167

摘要： The present invention provides a method of producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.
The method of producing a semiconductor epitaxial wafer includes a first step of irradiating a surface portion 10A of a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from carbon and a dopant element contained as a solid solution that are constituent elements of the cluster ions 16, in the surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer, the epitaxial layer 20 having a dopant element concentration lower than the peak concentration of the dopant element in the modifying layer 18.

公开(公告)号：US09396967B2

公开(公告)日：2016-07-19

申请号：US14946661

申请日：2015-11-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/322 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer.A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

公开(公告)号：US09224601B2

公开(公告)日：2015-12-29

申请号：US14078217

申请日：2013-11-12

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/02 ,  H01L27/146 ,  H01L21/265 ,  H01L21/322

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

摘要翻译： 提供了一种外延硅晶片，其由位错簇引起的外延缺陷和通过较高的吸杂能力实现的具有减少的金属污染的COP和一种制造外延晶片的方法。 一种外延硅晶片的制造方法，其特征在于，包括：第一工序，在硅晶片的表面部照射不含位错簇的硅晶片和具有簇离子的COP，形成由所述簇离子的构成元素形成的改性层; 以及在硅晶片的改性层上形成外延层的第二步骤。

公开(公告)号：US20240297201A1

公开(公告)日：2024-09-05

申请号：US18609373

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/167 ,  H01L29/36

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/14689 ,  H01L29/167 ,  H01L29/36

摘要： Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.