Invention Grant
US09576872B2 Semiconductor devices and methods for manufacturing semiconductor devices
有权
用于制造半导体器件的半导体器件和方法
- Patent Title: Semiconductor devices and methods for manufacturing semiconductor devices
- Patent Title (中): 用于制造半导体器件的半导体器件和方法
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Application No.: US14132296Application Date: 2013-12-18
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Publication No.: US09576872B2Publication Date: 2017-02-21
- Inventor: Thomas Mueller , Horst Theuss
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/31 ; H01L21/56
Abstract:
A method includes arranging multiple semiconductor chips over a first carrier and depositing a first material layer over surfaces of the multiple semiconductor chips, wherein depositing the first material layer includes a vapor deposition, and wherein the first material layer includes at least one of an organic material and a polymer.
Public/Granted literature
- US20150170987A1 Semiconductor Devices and Methods for Manufacturing Semiconductor Devices Public/Granted day:2015-06-18
Information query
IPC分类:
