Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14863894Application Date: 2015-09-24
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Publication No.: US09576885B2Publication Date: 2017-02-21
- Inventor: Katsuhiko Funatsu , Yukihiro Sato , Takamitsu Kanazawa , Masahiro Koido , Hiroyoshi Taya
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-199822 20140930
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/15 ; H01L23/12 ; H01L23/498 ; H01L23/00 ; H01L23/373 ; H01L25/07
Abstract:
A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a semiconductor chip mounted on some of the plurality of metal patterns. Also, a plurality of hollow portions are formed in peripheral portions of the plurality of metal patterns. In addition, the plurality of hollow portions are not formed in a region overlapping the semiconductor chip in the plurality of metal patterns. Furthermore, the plurality of hollow portions are provided in a plurality of metal patterns arranged at a position closest to the peripheral portion of the top surface of the ceramic substrate among the plurality of metal patterns.
Public/Granted literature
- US20160093594A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-31
Information query
IPC分类:
