Consistent with an example embodiment, a System on Chip (SoC) device operates in millimeter wave frequencies. The SoC device comprises, a silicon device having at least one differential pair pad, the at least one differential pair pad having a shunt inductor coupled thereon. A parasitic capacitance on at least one differential pair pads is tuned out by resonance of the shunt inductor. A package has a redistribution layer (RDL), with an array of contact areas to which the silicon device is mounted and then encapsulated. A connection corresponds to the at least one differential pair pad and the connection is located about an outer row or column of the array of contact areas.