公开(公告)号：US20160190673A1

公开(公告)日：2016-06-30

申请号：US14582830

申请日：2014-12-24

Applicant: NXP B.V.

Inventor： Mingda Huang ,  Markus Carolus Antonius van Schie

IPC: H01P7/10 ,  H01L23/64 ,  H01L23/66 ,  H01L23/00 ,  G06F17/50 ,  H01L23/31

CPC classification number: H01L23/645 ,  G06F17/5022 ,  G06F17/5068 ,  G06F17/5081 ,  H01L23/5227 ,  H01L23/66 ,  H01L28/10 ,  H01L2223/6638 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1423 ,  H01P5/028 ,  Y02T10/82

Abstract: Consistent with an example embodiment, a System on Chip (SoC) device operates in millimeter wave frequencies. The SoC device comprises, a silicon device having at least one differential pair pad, the at least one differential pair pad having a shunt inductor coupled thereon. A parasitic capacitance on at least one differential pair pads is tuned out by resonance of the shunt inductor. A package has a redistribution layer (RDL), with an array of contact areas to which the silicon device is mounted and then encapsulated. A connection corresponds to the at least one differential pair pad and the connection is located about an outer row or column of the array of contact areas.

Abstract translation: 与示例性实施例一致，片上系统（SoC）器件以毫米波频率工作。 SoC器件包括具有至少一个差分对焊盘的硅器件，所述至少一个差分对焊盘具有耦合在其上的分流电感器。 通过并联电感器的谐振来调谐至少一个差分对焊盘的寄生电容。 封装具有再分配层（RDL），其具有安装硅器件的接触区域阵列，然后封装。 连接对应于至少一个差分对焊盘，并且连接位于接触区域阵列的外部行或列周围。

公开(公告)号：US09576915B2

公开(公告)日：2017-02-21

申请号：US14582830

申请日：2014-12-24

Applicant: NXP B.V.

Inventor： Mingda Huang ,  Markus Carolus Antonius van Schie

IPC: H01L23/50 ,  H01L23/66 ,  H01L23/64 ,  G06F17/50 ,  H01L23/522 ,  H01L49/02 ,  H01P5/02

CPC classification number: H01L23/645 ,  G06F17/5022 ,  G06F17/5068 ,  G06F17/5081 ,  H01L23/5227 ,  H01L23/66 ,  H01L28/10 ,  H01L2223/6638 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1423 ,  H01P5/028 ,  Y02T10/82

Abstract: Consistent with an example embodiment, a System on Chip (SoC) device operates in millimeter wave frequencies. The SoC device comprises, a silicon device having at least one differential pair pad, the at least one differential pair pad having a shunt inductor coupled thereon. A parasitic capacitance on at least one differential pair pads is tuned out by resonance of the shunt inductor. A package has a redistribution layer (RDL), with an array of contact areas to which the silicon device is mounted and then encapsulated. A connection corresponds to the at least one differential pair pad and the connection is located about an outer row or column of the array of contact areas.

Abstract translation: 与示例性实施例一致，片上系统（SoC）器件以毫米波频率工作。 SoC器件包括具有至少一个差分对焊盘的硅器件，所述至少一个差分对焊盘具有耦合在其上的分流电感器。 通过并联电感器的谐振来调谐至少一个差分对焊盘的寄生电容。 封装具有再分配层（RDL），其具有安装硅器件的接触区域阵列，然后封装。 连接对应于至少一个差分对焊盘，并且连接位于接触区域阵列的外部行或列周围。