Invention Grant
- Patent Title: Preventing strained fin relaxation by sealing fin ends
- Patent Title (中): 通过密封翅片末端防止应变翅片松弛
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Application No.: US14722237Application Date: 2015-05-27
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Publication No.: US09576979B2Publication Date: 2017-02-21
- Inventor: Kangguo Cheng , Bruce B. Doris , Hong He , Sivananda K. Kanakasabapathy , Gauri Karve , Juntao Li , Fee Li Lie , Derrick Liu , Chun Wing Yeung
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Matthew Zehrer
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L27/12 ; H01L29/66 ; H01L29/161 ; H01L21/84 ; H01L29/78
Abstract:
A semiconductor structure includes a first strained fin portion and a second strained fin portion, a pair of inactive inner gate structures upon respective strained fin portions, and spacers upon outer sidewalls surfaces of the inactive inner gate structures, upon the inner sidewall surfaces of the inactive inner gate structures, and upon the first strained fin portion and the second strained fin portion end surfaces. The first strained fin portion and the second strained fin portion end surfaces are coplanar with respective inner sidewall surfaces of the inactive inner gate structures. The spacer formed upon the end surfaces limits relaxation of the first strained fin portion and the second strained fin portion and limits shorting between the first strained fin portion and the second strained fin portion.
Public/Granted literature
- US20160351590A1 PREVENTING STRAINED FIN RELAXATION Public/Granted day:2016-12-01
Information query
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