Invention Grant
US09577025B2 Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
有权
集成器件再分配层(RDL)中的金属绝缘体金属(MIM)电容器
- Patent Title: Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
- Patent Title (中): 集成器件再分配层(RDL)中的金属绝缘体金属(MIM)电容器
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Application No.: US14181522Application Date: 2014-02-14
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Publication No.: US09577025B2Publication Date: 2017-02-21
- Inventor: Shiqun Gu , Ryan David Lane , Glenn David Raskin , Shree Krishna Pandey
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/00 ; H01L23/538 ; H01L23/522

Abstract:
Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, and a redistribution portion coupled to one of the metal layers. The redistribution portion includes a first metal redistribution layer, an insulation layer coupled to the first metal redistribution layer, and a second metal redistribution layer coupled to the insulation layer. The first metal redistribution layer, the insulation layer, and the second metal redistribution layer are configured to operate as a capacitor in the integrated device. In some implementations, the capacitor is a metal-insulator-metal (MIM) capacitor.
Public/Granted literature
- US20150221714A1 METAL-INSULATOR-METAL (MIM) CAPACITOR IN REDISTRIBUTION LAYER (RDL) OF AN INTEGRATED DEVICE Public/Granted day:2015-08-06
Information query
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