An embodiment includes a first nonplanar transistor including a first fin that includes first source and drain nodes, and a first channel between the first source and drain nodes; a second nonplanar transistor including a second fin that includes second source and drain nodes, and a second channel between the second source and drain nodes; a nonplanar gate on the first fin between the first source and drain nodes and on the second fin between the second source and drain nodes; and first insulation included between the gate and the first fin and second insulation between the gate and the second fin; wherein the gate mechanically resonates at a first frequency when at least one of the gate and the first fin is actuated with alternating current (AC) to produce periodic forces on the gate. Other embodiments are described herein.